1/9 target specification february 2005 this is a preliminary information on a new product foreseen to be developed. details are subjet to change without notice STGD3NC60HD n-channel 3a - 600v dpak very fast powermesh? igbt table 1: general features lower on-voltage drop (v cesat ) off losses include tail current losses include diode recovery energy lower c res /c ies ratio high frequency operation very soft ultra fast recovery anti parallel diode new generation products with tighter parameter distribution description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the pow- ermesh ? igbts, with outstanding performances. the suffix "h" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) man- taining a low voltage drop. applications high frequency inverters smps and pfc in both hard switch and resonant topologies motor drivers table 2: order code figure 1: package figure 2: internal schematic diagram type v ces v ce(sat) (max) @25c i c @100c STGD3NC60HDt4 600 v < 2.5 v6 a 1 3 dpak part number marking package packaging STGD3NC60HDt4 gd3nc60hd dpak tape & reel rev. 1
STGD3NC60HD 2/9 table 3: absolute maximum ratings ( ) pulse width limited by max. junction temperature. table 4: thermal data electrical characteristics (t case =25 c unless otherwise specified) table 5: main parameters (#) calculated according to the iterative formula: symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c = 25 c (#) 10 a i c collector current (continuous) at t c = 100 c (#) 6a i cm ( ) collector current (pulsed) 24 a i f diode rms forward current at t c = 25 c tbd a p tot total dissipation at t c = 25 c 50 w derating factor 0.40 w/ c t stg storage temperature ? 55 to 150 c t j operating junction temperature min. typ. max. rthj-case thermal resistance junction-case 2.5 c/w rthj-amb thermal resistance junction-ambient 100 c/w t l maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec.) 275 c symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 1 ma, v ge = 0 600 v i ces collector cut-off current (v ge = 0) v ce = max rating, t c = 25 c v ce = max rating, t c = 125 c 10 1 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20v , v ce = 0 100 na v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 3.75 5.75 v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 3 a v ge = 15v, i c = 3 a, tc= 125 c 1.9 1.7 2.5 v v i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () -------------------------------------------------------------------------------------------------- =
3/9 STGD3NC60HD electrical characteristics (continued) table 6: dynamic (1) pulsed: pulse duration= 300 s, duty cycle 1.5% table 7: switching on table 8: switching off table 9: switching energy (2) eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. if the igbt is offered in a packag e with a co-pack diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25 c and 125 c) (3) turn-off losses include also the tail of the collector current. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ce = 15 v , i c = 3 a tbd s c ies input capacitance v ce = 25 v, f= 1 mhz, v ge = 0 320 pf c oes output capacitance 28 pf c res reverse transfer capacitance 7.2 pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390 v, i c = 3 a, v ge = 15 v (see figure 5) 15 tbd tbd tbd nc nc nc i cl turn-off soa minimum current v clamp = 480 v , tj = 150 c r g = 10 ?, v ge = 15 v tbd a symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 3 a r g =10 ? , v ge = 15v, tj= 25 c (see figure 3) tbd tbd tbd ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 3 a r g =10 ? , v ge = 15v, tj= 125 c (see figure 3) tbd tbd tbd ns ns a/s symbol parameter test conditions min. typ. max. unit t r (v off ) off voltage rise time v cc = 390 v, i c = 3 a, r g = 10 ? , v ge = 15 v t j = 25 c (see figure 3) tbd ns t d ( off ) turn-off delay time tbd ns t f current fall time 70 ns t r (v off ) off voltage rise time v cc = 390 v, i c = 3 a, r g = 10 ? , v ge = 15 v tj = 125 c (see figure 3) tbd ns t d ( off ) turn-off delay time tbd ns t f current fall time tbd ns symbol parameter test conditions min. typ. max unit eon (2) e off (3) e ts turn-on switching losses turn-off switching loss total switching loss v cc = 390 v, i c = 3 a r g = 10 ? , v ge = 15v, tj= 25 c (see figure 3) tbd tbd tbd j j j eon (2) e off (3) e ts turn-on switching losses turn-off switching loss total switching loss v cc = 390 v, i c = 3 a r g = 10 ? , v ge = 15v, tj= 125 c (see figure 3) tbd tbd tbd j j j
STGD3NC60HD 4/9 table 10: collector-emitter diode symbol parameter test condiction min. typ. max. unit v f forward on-voltage if = 1.5 a if = 1.5 a, tj = 125 c 1.6 1.3 2.1 v v t rr t a q rr i rrm s reverse recovery time reverse recovery charge reverse recovery current softness factor of the diode if = 1.5 a, v r = 40 v, t j = 25 c, di/dt = 100 a/s (see figure 6) tbd tbd tbd tbd tbd ns ns nc a t rr t a q rr i rrm s reverse recovery time reverse recovery charge reverse recovery current softness factor of the diode if = 1.5 a, v r = 40 v, t j = 125 c, di/dt = 100 a/s (see figure 6) tbd tbd tbd tbd tbd ns ns nc a
5/9 STGD3NC60HD figure 3: test circuit for inductive load switching figure 4: switching waveforms figure 5: gate charge test circuit figure 6: diode recovery time waveforms
STGD3NC60HD 6/9 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
7/9 STGD3NC60HD tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
STGD3NC60HD 8/9 table 11: revision history date revision description of changes 11-feb-2005 1 first release
9/9 STGD3NC60HD information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america
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